| PART |
Description |
Maker |
| G7151-16 G7150 G7150-16 |
InGaAs PIN photodiode array
Active area: 0.45x1mm; spectral response range:0.9-1.7um; reverse voltage:5V; InGaAs PIN photodiode array: 16-element array. For near infrared (NIR) spectrophotometer
|
HAMAMATSU[Hamamatsu Corporation]
|
| PD500 PD500-1XX PD500-0XX |
500μm InGaAs Photodiode
500レm InGaAs Photodiode
500?? InGaAs Photodiode
|
ANADIGICS[ANADIGICS, Inc]
|
| PD-1170 |
InGaAs PIN PHOTODIODE 3 mm InGaAs PIN Photdiode with TO-5 Package
|
Optoway Technology Inc.
|
| PD070 PD070-003-100 PD070-003-105 PD070-003-5XX PD |
70μm InGaAs Photodiode
70レm InGaAs Photodiode
70?? InGaAs Photodiode
|
ANADIGICS[ANADIGICS, Inc]
|
| G9906-01 |
InGaAs PIN photodiode
|
Hamamatsu Corporation
|
| G6849-01 G6849 |
InGaAs PIN photodiode
|
HAMAMATSU[Hamamatsu Corporation]
|
| G842306 |
InGaAs PIN photodiode
|
Hamamatsu Corporation
|
| KPPB1-LM622 |
InGaAs PIN Photodiode 铟镓砷PIN光电二极
|
KODENSHI, CORP.
KODENSHI KOREA CORP.
Kondenshi Corp
|
| G10342-54 |
InGaAs PIN photodiode with preamp
|
Hamamatsu Photonics
|
| FID3Z1KX |
(FID3Z1KX/LX) InGaAs PIN PhotoDiode
|
Fujitsu
|
